NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ)

12-150V P-Channel Trench MOSFET

SuperSOT4??40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

SuperSOT4??40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

Reduced footprint and volume required for surge protection

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