NAND01GR3B2C技术资料参数原装现货专卖-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

芯片资料
库存查询
行业新闻
生产厂家
替换型号
晶体管

型号	功能描述	生产厂家&企业
NAND01GR3B2C	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CN5E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CN5F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CN6E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CN6F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZA5E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZA5F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZA6E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZA6F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZF5E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZF5F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZF6E	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CZF6F	1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16	NUMONYX numonyx
NAND01GR3B2CN1	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CN1E	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CN1E	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CN1F	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CN1F	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CN6	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CN6E	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CN6E	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CN6F	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CN6F	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA1	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA1E	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CZA1E	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA1F	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CZA1F	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA6	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA6E	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA6E	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CZA6E	封装/外壳：63-TFBGA 包装：管件描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC）存储器	ELPIDAElpida Memory 美光科技美光科技股份有限公司
NAND01GR3B2CZA6F	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZA6F	1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx
NAND01GR3B2CZB1	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2CZB6	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
NAND01GR3B2B	1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团

NAND01GR3B2C产品属性

类型
描述
型号
NAND01GR3B2C
制造商
Micron Technology Inc
功能描述
NAND - Gel-pak, waffle pack, wafer, diced wafer on film

NAND01GR3B2C供应商更多...

更新时间：2025-7-4 16:16:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	NAND01GR3B2CZA6E	MICRON/美光	24+	BGA63	8496	美光专营原装正品	询价
深圳市正迈科技有限公司	NAND01GR3B2CZA6E	Numonyx	23+	NA	3680	专业电子元器件供应链正迈科技特价代理QQ1304306553	询价
深圳市向鸿伟业电子有限公司	NAND01GR3B2CZA6	ST/意法	2402+	VFBGA63	8324	原装正品!实单价优!	询价
深圳市赛美科科技有限公司	NAND01GR3B2CZA6	ST		VFBGA63	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华斯顿科技有限公司	NAND01GR3B2CZA6F	ST	25+23+	QFN	29870	绝对原装正品现货,全新深圳原装进口现货	询价
标准国际(香港)有限公司	NAND01GR3B2CZA6E	ST MICRO	1125		39	公司优势库存热卖中!	询价
深圳市东来宝电子科技有限公司	NAND01GR3B2CZA6E	NUMONYX	24+	BGA	47186	郑重承诺只做原装进口现货	询价
深圳市赛特兴科技有限公司	NAND01GR3B2CZA6E	MICRON	23+	VFBGA63	8076	正规渠道,只有原装!	询价
深圳市勤思达科技有限公司	NAND01GR3B2CZA6E	MICRON	24+	VFBGA63	5000	全新原装正品,现货销售	询价
深圳市恒创达实业有限公司	NAND01GR3B2CZA6E	NUMONYX	17+	BGA	6200	100%原装正品现货	询价

NAND01GR3B2C芯片相关品牌

NAND01GR3B2C规格书下载地址

NAND01GR3B2C参数引脚图相关

NAND01GR3B2C数据表相关新闻

NAC3PX-TOP
NAC3PX-TOP
2024-6-28
NA5-7W001BV1高级可编程终端/HMI
OmronAutomationandSafety的可编程终端可通过宽屏型号实现更快、更高效的控制和监控
2024-2-23
N9102
MP3音乐播放芯片IC串口解码芯片N910X报警器语音ICN9102-16S
2021-12-28
NAND01GR3B2CZA6E 原装现货
NAND01GR3B2CZA6E可做含税，支持实单
2021-9-14
NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009
NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009
2020-5-8
NANOSMDC012F-2泰科保险丝全新原装供应
NANOSMDC012F-2泰科保险丝
2019-11-16

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101

您好,欢迎来到114ic资料网！

NAND01GR3B2C产品属性

NAND01GR3B2C供应商更多...

NAND01GR3B2C芯片相关品牌

NAND01GR3B2C规格书下载地址

NAND01GR3B2C参数引脚图相关

NAND01GR3B2C数据表相关新闻

NAC3PX-TOP

NA5-7W001BV1高级可编程终端/HMI

N9102

NAND01GR3B2CZA6E 原装现货

NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009

NANOSMDC012F-2泰科保险丝全新原装供应

DdatasheetPDF页码索引