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型号	功能描述	生产厂家企业	LOGO
NAND01GR3B2C	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2C	1-Gbit, 2112-byte/1056-word page,1.8 V/3 V, single level cell NAND flash memory	Micron 美光	Micron
NAND01GR3B2CN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CN1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CN1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CN1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CN1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CN6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CN6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CN6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CN6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CZA1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CZA1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CZA6E	封装/外壳：63-TFBGA 包装：管件描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
NAND01GR3B2CZA6E	IC FLASH 1G PARALLEL 63VFBGA	Micron 美光	Micron
NAND01GR3B2CZA6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZA6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2CZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2CZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

NAND01GR3B2C产品属性

类型
描述
型号
NAND01GR3B2C
制造商
Micron Technology Inc
功能描述
NAND - Gel-pak, waffle pack, wafer, diced wafer on film

NAND01GR3B2C供应商更多...

更新时间：2025-11-21 19:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华睿芯科技有限公司	NAND01GR3B2CZA6F	ST	24+	QFN	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市威雅利发展有限公司	NAND01GR3B2CZA6E	NUMONYX	19+	BGA	1260	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市振宏微科技有限公司	NAND01GR3B2CZA6E	NUMONYX	23+	原厂封装	13528	振宏微原装正品,假一罚百	询价
深圳市正纳电子有限公司	NAND01GR3B2CZA6E	micron(镁光)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市粤骏腾电子科技有限公司	NAND01GR3B2CZA6E	MICRON/美光	24+	BGA63	8496	美光专营原装正品	询价
深圳市赛特兴科技有限公司	NAND01GR3B2CZA6E	MICRON	23+	VFBGA63	8076	正规渠道,只有原装!	询价
深圳市盈慧通电子有限公司	NAND01GR3B2CZA6	ST(意法)	2511		8484	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市科芯源微电子有限公司	NAND01GR3B2CZA6E其他被动元件	ST/意法	25+	VFBGA63	58788	百分百原装现货实单必成欢迎询价	询价
深圳市赛美科科技有限公司	NAND01GR3B2CZA6	ST		VFBGA63	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市云美电子科技有限公司	NAND01GR3B2CZA6E	MICRON/美光	24+	VFBGA63	34560	只做全新原装进口现货	询价

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NAND01GR3B2C产品属性

NAND01GR3B2C供应商更多...

NAND01GR3B2C芯片相关品牌

NAND01GR3B2C规格书下载地址

NAND01GR3B2C参数引脚图相关

NAND01GR3B2C数据表相关新闻

NAC3PX-TOP

NA5-7W001BV1高级可编程终端/HMI

N9102

NAND01GR3B2CZA6E 原装现货

NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009

NANOSMDC012F-2泰科保险丝全新原装供应

DdatasheetPDF页码索引