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型号	功能描述	生产厂家企业	LOGO
NAND01GR3B2B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA6E	封装/外壳：63-TFBGA 包装：管件描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
NAND01GR3B2BZA6E	IC FLASH 1G PARALLEL 63VFBGA	MICRON 美光	MICRON
NAND01GR3B2BZA6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2C	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX

NAND01GR3B2B产品属性

类型
描述
型号
NAND01GR3B2B
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GR3B2B供应商更多...

更新时间：2026-1-27 19:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华睿芯科技有限公司	NAND01GR3B2BZA6	ST	24+	BGA	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市冠亿通科技有限公司	NAND01GR3B2BZA6E	Micron Technology Inc.			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市赛尔通科技有限公司	NAND01GR3B2BZA6E	Numonyx/STMi	23+	63-VFBGA	65480		询价
深圳市能创芯电子科技有限公司	NAND01GR3B2BZA6E	STM	23+	BGA	6000	原装正品假一罚百!可开增票!	询价
深圳市正纳电子有限公司	NAND01GR3B2BZA6E	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
谛辉(北京/上海/青岛 )电子科技有限公司	NAND01GR3B2BZA6E	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市宏世佳电子科技有限公司	NAND01GR3B2BZA6	ST	2025+	VFBGA63	3550	全新原厂原装产品、公司现货销售	询价
深圳市高捷芯城科技有限公司	NAND01GR3B2BZA6E	micron(镁光)	25+	TFBGA-153(11.5x13)	6843	样件支持,可原厂排单订货!	询价
深圳市胜彬电子有限公司	NAND01GR3B2BZA6	ST	22+	VFBGA63	3000	原装正品,支持实单	询价
深圳市斌腾达科技有限公司	NAND01GR3B2BZA6E	Micron Technology Inc.	21+	6-XBGA,FCBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价

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NAND01GR3B2B产品属性

NAND01GR3B2B供应商更多...

NAND01GR3B2B芯片相关品牌

NAND01GR3B2B规格书下载地址

NAND01GR3B2B参数引脚图相关

NAND01GR3B2B数据表相关新闻

NAC3PX-TOP

NA5-7W001BV1高级可编程终端/HMI

N9102

NAND01GR3B2CZA6E 原装现货

NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009

NANOSMDC012F-2泰科保险丝全新原装供应

DdatasheetPDF页码索引