位置：首页 > IC中文资料第8378页 > NAND01GR3B2B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR3B2B | 1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx |  | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
封装/外壳：63-TFBGA 包装：管件 描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYX numonyx | | |
NAND01GR3B2B产品属性
- 类型
描述
- 型号
NAND01GR3B2B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
STM |
09+ |
BGA63 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
BGA |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
ST |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
24+ |
NA/ |
3362 |
原装现货,当天可交货,原型号开票 |
|||
ST |
22+ |
VFBGA63 |
3000 |
原装正品,支持实单 |
|||
STM |
6000 |
面议 |
19 |
DIP/SMD |
|||
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
ST |
21+ |
BGA |
10000 |
原装现货假一罚十 |
NAND01GR3B2B芯片相关品牌
NAND01GR3B2B规格书下载地址
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DdatasheetPDF页码索引
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