TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

P-Channel Logic Level Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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MOSFET

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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MOSFET

P-Channel Enhancement Mode Power MOSFET

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Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

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Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

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Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

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Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

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P-Channel 60 V (D-S) MOSFET

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super

P-Channel 60 V (D-S) MOSFET

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P-Channel 60-V (D-S) MOSFET

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