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MTB30P06价格
参考价格：￥0.0000
型号：MTB30P06VT4G 品牌：ON SEMICONDUCTOR 备注：这里有MTB30P06多少钱，2025年最近7天走势，今日出价，今日竞价，MTB30P06批发/采购报价，MTB30P06行情走势销售排行榜，MTB30P06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTB30P06 | TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | Motorola 摩托罗拉 |   | |
MTB30P06 | TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate | ETC 知名厂家 | ETC | |
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | Motorola 摩托罗拉 | | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an | ONSEMI 安森美半导体 | | ||
P-Channel Logic Level Enhancement Mode Power MOSFET 文件：294.22 Kbytes Page：9 Pages | CYSTEKEC 全宇昕科技 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：414.85 Kbytes Page：8 Pages | CYSTEKEC 全宇昕科技 | | ||
MOSFET | CYSTEKEC 全宇昕科技 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：414.85 Kbytes Page：8 Pages | CYSTEKEC 全宇昕科技 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：438.87 Kbytes Page：9 Pages | CYSTEKEC 全宇昕科技 | | ||
MOSFET | CYSTEKEC 全宇昕科技 | | ||
P-Channel Enhancement Mode Power MOSFET 文件：438.91 Kbytes Page：9 Pages | CYSTEKEC 全宇昕科技 | | ||
Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK 文件：87.07 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK 文件：87.07 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK 文件：87.07 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK 文件：87.07 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
P-Channel 60 V (D-S) MOSFET 文件：915.91 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super | ADV 爱德微 | | ||
P-Channel 60 V (D-S) MOSFET 文件：971.54 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60-V (D-S) MOSFET 文件：544.27 Kbytes Page：5 Pages | BWTECH | |
MTB30P06产品属性
- 类型
描述
- 型号
MTB30P06
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 30 AMPERES 60 VOLTS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
13703 |
公司只做原装正品,假一赔十 |
||||
ONSEMI/安森美 |
22+ |
TO-263 |
25800 |
原装正品支持实单 |
|||
ON |
23+ |
TO-263 |
2674 |
原厂原装正品 |
|||
ON/安森美 |
24+ |
TO-263 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
ON |
NEW |
TO-263 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价MTB30P06KJ3即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
NA |
13650 |
原装正品,假一罚百! |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
ON |
25+ |
D2PAK |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
MTB30P06规格书下载地址
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