TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM

P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to with stand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V

• On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low RDS(on)Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSSand VDS(on)Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET