P-Channel Enhancement Mode Power MOSFET

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MOSFET

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

P-Channel Enhancement Mode Power MOSFET

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super

P-Channel 60 V (D-S) MOSFET

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P-Channel 60-V (D-S) MOSFET

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