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型号 功能描述 生产厂家 企业 LOGO 操作
MTB30P06VG

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

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MTB30P06VG

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

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ONSEMI

安森美半导体

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

MOTOROLA

摩托罗拉

30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw

INTERSIL

MTB30P06VG产品属性

  • 类型

    描述

  • 型号

    MTB30P06VG

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail

更新时间:2026-5-19 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYSTECH/全宇昕
23+
TSOP-6
89630
当天发货全新原装现货
SHEJ
24+
ZIP
4600
原装现货假一罚十
SHINDENGE
22+
ZIP-16
20000
公司只做原装 品质保障
SHINDENGE
25+
ZIP-16
30000
代理全新原装现货,价格优势
ON
22+
TO-263
3000
原装正品,支持实单
SST
原厂封装
9800
原装进口公司现货假一赔百
ON
24+
TO-263
143
CYSTECH/全宇昕
23+
2*2-6
15000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
25+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
MOT
25+
TO-39
13549

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