位置:首页 > IC中文资料第1781页 > MTB30P06VG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTB30P06VG | Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an | ONSEMI 安森美半导体 | ||
MTB30P06VG | Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK 文件:87.07 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | ||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt | MOTOROLA 摩托罗拉 | |||
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw | INTERSIL |
MTB30P06VG产品属性
- 类型
描述
- 型号
MTB30P06VG
- 制造商
ON Semiconductor
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYSTECH/全宇昕 |
23+ |
TSOP-6 |
89630 |
当天发货全新原装现货 |
|||
SHEJ |
24+ |
ZIP |
4600 |
原装现货假一罚十 |
|||
SHINDENGE |
22+ |
ZIP-16 |
20000 |
公司只做原装 品质保障 |
|||
SHINDENGE |
25+ |
ZIP-16 |
30000 |
代理全新原装现货,价格优势 |
|||
ON |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ON |
24+ |
TO-263 |
143 |
||||
CYSTECH/全宇昕 |
23+ |
2*2-6 |
15000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
MOT |
25+ |
TO-39 |
13549 |
MTB30P06VG规格书下载地址
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DdatasheetPDF页码索引
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