Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and comm • Avalanche Energy Specified\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Packages are Available;

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件：87.07 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件：87.07 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件：87.07 Kbytes Page：8 Pages

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件：87.07 Kbytes Page：8 Pages

丝印代码：D2PAK；P-Channel 60 V (D-S) MOSFET

文件：915.91 Kbytes Page：7 Pages

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw