MTB30P06V价格

参考价格:¥0.0000

型号:MTB30P06VT4G 品牌:ON SEMICONDUCTOR 备注:这里有MTB30P06V多少钱,2025年最近7天走势,今日出价,今日竞价,MTB30P06V批发/采购报价,MTB30P06V行情走势销售排行榜,MTB30P06V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MTB30P06V

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

Motorola

摩托罗拉

MTB30P06V

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06V

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

ONSEMI

安森美半导体

MTB30P06V

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

Motorola

摩托罗拉

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

P-Channel 60 V (D-S) MOSFET

文件:915.91 Kbytes Page:7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Power MOSFET

文件:414.85 Kbytes Page:8 Pages

CYSTEKEC

全宇昕科技

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super

ADV

爱德微

P-Channel 60 V (D-S) MOSFET

文件:971.54 Kbytes Page:7 Pages

VBSEMI

微碧半导体

P-Channel 60-V (D-S) MOSFET

文件:544.27 Kbytes Page:5 Pages

BWTECH

MTB30P06V产品属性

  • 类型

    描述

  • 型号

    MTB30P06V

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail

更新时间:2025-9-26 15:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ON
23+
TO-263
174
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ON
23+
TO263
5000
原装正品,假一罚十
ON
23+
TO-263
6893
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
23+
SOT-252
15016
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
ON/安森美
23+
TO-263
50000
全新原装正品现货,支持订货
ON
2025+
TO-263-2
5425
全新原厂原装产品、公司现货销售

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