MTB30P06VT4G价格

参考价格:¥0.0000

型号:MTB30P06VT4G 品牌:ON SEMICONDUCTOR 备注:这里有MTB30P06VT4G多少钱,2025年最近7天走势,今日出价,今日竞价,MTB30P06VT4G批发/采购报价,MTB30P06VT4G行情走势销售排行榜,MTB30P06VT4G报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MTB30P06VT4G

P-Channel 60 V (D-S) MOSFET

文件:915.91 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G产品属性

  • 类型

    描述

  • 型号

    MTB30P06VT4G

  • 功能描述

    MOSFET PFET D2PAK 60V 30A 80mOhm

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-10 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/
24+
TO-263
5000
全新原装正品,现货销售
ON
24+
D2PAK3LEAD
8866
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON
22+
D2PAK
3000
原装正品,支持实单
ON
1716+
?
7500
只做原装进口,假一罚十
2406+
1850
诚信经营!进口原装!量大价优!
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON/安森美
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
0N
21+
TO263
10032
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