MTB30P06VT4G价格

参考价格:¥0.0000

型号:MTB30P06VT4G 品牌:ON SEMICONDUCTOR 备注:这里有MTB30P06VT4G多少钱,2025年最近7天走势,今日出价,今日竞价,MTB30P06VT4G批发/采购报价,MTB30P06VT4G行情走势销售排行榜,MTB30P06VT4G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MTB30P06VT4G

P-Channel 60 V (D-S) MOSFET

文件:915.91 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G产品属性

  • 类型

    描述

  • 型号

    MTB30P06VT4G

  • 功能描述

    MOSFET PFET D2PAK 60V 30A 80mOhm

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 10:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
D2PAK3LEAD
8866
ON/安森美
25+
TO-263-2
5843
就找我吧!--邀您体验愉快问购元件!
NK/南科功率
2025+
TO-263
986966
国产
ON
2025+
TO-263-3
3577
全新原厂原装产品、公司现货销售
ON/安森美
23+
TO-263
50000
全新原装正品现货,支持订货
0N
21+
TO263
10032
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
24+
TO-263
9000
只做原装,欢迎询价,量大价优
ON(安森美)
24+
标准封装
8334
全新原装正品/价格优惠/质量保障
ON/安森美
2021+
TO-263
9000
原装现货,随时欢迎询价
ON Semiconductor
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单

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