MTB30P06VT4G价格

参考价格:¥0.0000

型号:MTB30P06VT4G 品牌:ON SEMICONDUCTOR 备注:这里有MTB30P06VT4G多少钱,2026年最近7天走势,今日出价,今日竞价,MTB30P06VT4G批发/采购报价,MTB30P06VT4G行情走势销售排行榜,MTB30P06VT4G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MTB30P06VT4G

P-Channel 60 V (D-S) MOSFET

文件:915.91 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET 30 Amps, 60 Volts P?묬hannel D2PAK

文件:87.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

ONSEMI

安森美半导体

MTB30P06VT4G产品属性

  • 类型

    描述

  • 型号

    MTB30P06VT4G

  • 功能描述

    MOSFET PFET D2PAK 60V 30A 80mOhm

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-2 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
D2PAK
15017
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON(安森美)
24+
标准封装
8334
全新原装正品/价格优惠/质量保障
onsemi
25+
D2PAK
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
2406+
1850
诚信经营!进口原装!量大价优!
ON/
24+
TO-263
25836
新到现货,只做全新原装正品
ON/安森美
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
ON
2023+
TO-263
5800
进口原装,现货热卖
VBSEMI/台湾微碧
24+
TO263
60000
全新原装现货
ON(安森美)
25+
标准封装
8800
公司只做原装,详情请咨询
ON
25+
D2PAK-2WIRE
188600
全新原厂原装正品现货 欢迎咨询

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