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MT48价格
参考价格：￥1663.3854
型号：MT48FNX 品牌：Switchcraft 备注：这里有MT48多少钱，2025年最近7天走势，今日出价，今日竞价，MT48批发/采购报价，MT48行情走势销售排行榜，MT48报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48 | PATCHBAYS 文件：216.45 Kbytes Page：1 Pages | SWITCH Switch Publishing Co.，Ltd. |   | |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
MOBILE SDRAM GENERAL DESCRIPTION The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 67,108,8 | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728 | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864- | Micron 镁光 | | ||
SYNCHRONOUS DRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper | Micron 镁光 | | ||
SYNCHRONOUS DRAM SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper | Micron 镁光 | | ||
SYNCHRONOUS DRAM
| Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | | ||
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | Micron 镁光 | |
MT48产品属性
- 类型
描述
- 型号
MT48
- 制造商
SWITCH
- 制造商全称
Switchcraft, Inc.
- 功能描述
PATCHBAYS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
25+23+ |
TSOP |
39075 |
绝对原装正品全新进口深圳现货 |
|||
MICRON |
25+ |
TSOP86 |
6500 |
100%进口原装假一罚百!可开17%增值税票!特价!特价!!! |
|||
MICRON/镁光 |
24+ |
TSOP |
27000 |
绝对全新原装现货特价销售,欢迎来电查询 |
|||
Micron |
23+ |
TSOP54 |
1800 |
正规渠道,只有原装! |
|||
MICRON/镁光 |
23+ |
BGA |
3500 |
||||
MICRON/美光 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
25+ |
17ROHS |
880000 |
明嘉莱只做原装正品现货 |
||||
Microsemi |
24+ |
TSOP-54 |
89560 |
军工宇航IC专业供应商!有COC原厂证书! |
|||
MICRON |
22+ |
BGA90 |
7263 |
||||
MICRON |
23+ |
FBGA54 |
2000 |
MT48规格书下载地址
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- MT47H64M16NF-25EAAT:M
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- MT47H32M16NF-25EAAT:HTR
- MT47H32M16NF-25E:HTR
- MT47H32M16NF-25E:H
- MT47H32M16HW-25EIT:G
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- MT47H32M16HR-25EIT:G
- MT47H32M16HR>M>
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- MT470-Y
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- MT470
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- MT440-Y
- MT440-O
- MT440-G
- MT4409
- MT4407
- MT430-Y
- MT430-O
- MT430-G
- MT400
- MT3S46T
- MT3S45T
- MT3S41T
MT48数据表相关新闻
MT48LC16M16A2P-6AIT:G
原装代理
2023-9-4MT48LC16M16A2P-75L:D 深圳旭亨半导体有限公司
MT48LC16M16A2P-75L:D MICRON 原装现货 长期供应 QQ：2880524286
2021-4-26MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT47H64M16NF-25E:M 深圳旭亨半导体有限公司
MT47H64M16NF-25E:M MICRON 原装现货长期供应 0755-88879678 / 131 6803 6460 QQ：2880524281
2021-4-15MT47H64M16NF-25EIT:M 假一罚十
只做原装正品，欢迎来电咨询！
2020-12-9MT47H64M16HR-3IT进口原装，主营军工级IC
MT47H64M16HR-3IT XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-11-11
DdatasheetPDF页码索引
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