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位置：首页 > IC中文资料第5473页 > MT48H16M16LF

型号 功能描述 生产厂家 企业 LOGO 操作
MT48H16M16LF

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LF

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

Micron

美光

MT48H16M16LFB5-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFB5-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFBF-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H16M16LFFG

MOBILE SDRAM

GENERAL DESCRIPTION The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 67,108,8

Micron

美光

MT48H16M16LFBF-6 IT:H

MOBILE SDRAM 256M X16 VFBGA

Micron

美光

MT48H16M16LFBF-6:H

MOBILE SDRAM 256M X16 VFBGA

Micron

美光

MT48H16M16LFBF-6:H

封装/外壳：54-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器

ETC

知名厂家

MT48H16M16LFBF-75 AT:G TR

封装/外壳：54-VFBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DRAM 256MBIT PARALLEL 54VFBGA 集成电路（IC） 存储器

ETC

知名厂家

MT48H16M16LF产品属性

  • 类型

    描述

  • 型号

    MT48H16M16LF

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 256Mb

    16 Meg x 16, 8 Meg x 32 Mobile SDRAM

MT48H16M16LF供应商更多...

更新时间：2026-1-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MT48H16M16LFBF-8IT
micron(镁光)
24+
标准封装
12048
全新原装正品/价格优惠/质量保障
询价
深圳市华斯顿科技有限公司
MT48H16M16LFB
原装
25+23+
17225
绝对原装正品全新进口深圳现货
询价
深圳市坤融电子科技有限公司
MT48H16M16LFBF-75
MICRON/美光
2025+
BGA
4000
原装进口价格优 请找坤融电子!
询价
深圳市恒创达实业有限公司
MT48H16M16LFBF-6:H
Micron
17+
6200
询价
深圳诚思涵科技有限公司
MT48H16M16LFBF-10IT:G
MICRON
16+
BGA
4000
进口原装现货/价格优势!
询价
深圳市昌和盛利电子有限公司
MT48H16M16LFBF-75IT
MICRON原装正品专卖价
NEW
54-VFBGA
20259
全新原装正品,价格优势,长期供应,量大可订
询价
艾睿（深圳）半导体有限公司
MT48H16M16LFB8-8IT
MICRON/美光
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
中天科工半导体（深圳）有限公司
MT48H16M16LFBF-75AT:H
MICRON/美光
25+
BGA
32360
MICRON/美光全新特价MT48H16M16LFBF-75AT:H即刻询购立享优惠#长期有货
询价
深圳市卓越微芯电子有限公司
MT48H16M16LFBG-8LXT
MICRON(镁光)
25+
FBGA
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市威雅利发展有限公司
MT48H16M16LFBF-6:H
micron
13+
FBGA
1321
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

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