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MT48LC16M8A2价格
参考价格：￥41.6159
型号：MT48LC16M8A2P-6A:LTR 品牌：MICRON 备注：这里有MT48LC16M8A2多少钱，2025年最近7天走势，今日出价，今日竞价，MT48LC16M8A2批发/采购报价，MT48LC16M8A2行情走势销售排行榜，MT48LC16M8A2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48LC16M8A2 | SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 |  |   |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM
| MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUS DRAM General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432- | MicronMicron Technology 镁光美国镁光科技有限公司 | | | |
封装/外壳：60-TFBGA 包装：散装 描述：IC DRAM 128MBIT PARALLEL 60FBGA 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 |  | | |
封装/外壳：60-TFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器 | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | | | |
SYNCHRONOUS DRAM 文件：4.137859 Mbytes Page：55 Pages | MicronMicron Technology 镁光美国镁光科技有限公司 | | |
MT48LC16M8A2产品属性
- 类型
描述
- 型号
MT48LC16M8A2
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
13048 |
全新原装正品/价格优惠/质量保障 |
|||
MICRON/美光 |
25+ |
BGA |
12496 |
MICRON/美光原装正品MT48LC16M8A2FB-75:E即刻询购立享优惠#长期有货 |
|||
MICRON |
2016+ |
TSOP54 |
4271 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MICRON |
1502 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
MICRON/美光 |
21+ |
BGA |
2000 |
十年专营,原装现货,假一赔十 |
|||
Micron |
1844+ |
FBGA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
只做原装 |
24+ |
TSSOP-54 |
36520 |
一级代理/放心采购 |
|||
MICRON |
2025+ |
TSOP |
3795 |
全新原装、公司现货热卖 |
|||
MICRON/美光 |
25+ |
TSOP |
8000 |
全新原装正品支持含税 |
|||
MICRON美光 |
24+ |
TSOP |
13500 |
免费送样原盒原包现货一手渠道联系 |
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MT48LC16M8A2数据表相关新闻
MT48LC32M16A2P-75
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2022-10-28MT48LC32M16A2P-75 IT:C
原装代理
2022-8-17MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:G MICRON 原装现货 长期供应 QQ：2880524286
2021-4-26MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:G MICRON 原装现货 长期供应 QQ：2880524281
2021-4-22MT48LC32M16A2P-75:C正品渠道 价格优势
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-11-6MT48LC16M16A2TG-6AIT:G顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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