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MT48LC16M8A2价格
参考价格：￥41.6159
型号：MT48LC16M8A2P-6A:LTR 品牌：MICRON 备注：这里有MT48LC16M8A2多少钱，2024年最近7天走势，今日出价，今日竞价，MT48LC16M8A2批发/采购报价，MT48LC16M8A2行情走势销售排行榜，MT48LC16M8A2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MT48LC16M8A2 | SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM
| MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：60-TFBGA 包装：散装 描述：IC DRAM 128MBIT PARALLEL 60FBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：60-TFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 60TFBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
SYNCHRONOUSDRAM 文件：4.137859 Mbytes Page：55 Pages | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
MT48LC16M8A2产品属性
- 类型
描述
- 型号
MT48LC16M8A2
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
SYNCHRONOUS DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
23+ |
标准封装 |
13048 |
全新原装正品/价格优惠/质量保障 |
|||
MICRON/美光 |
22+ |
TSOP |
7500 |
只做原装正品假一赔十!正规渠道订货! |
|||
MICRON/美光 |
2022+ |
TSOP |
788 |
只做进口原装正品现货,开13%增值税票! |
|||
MICRON |
23+ |
BGA |
20000 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
MICRON/美光 |
21+ |
BGA |
2000 |
十年专营,原装现货,假一赔十 |
|||
Micron Technology Inc. |
21+ |
24-TBGA,CSPBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
MTCRON |
TSOP54 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MICRON |
2016+ |
TSOP54 |
4271 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MICRON |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
|||||
MICRON |
2017+ |
TSSOP-54 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
MT48LC16M8A2芯片相关品牌
MT48LC16M8A2规格书下载地址
MT48LC16M8A2参数引脚图相关
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- MT-4896
- MT-48
- MT470-Y
- MT470-R
- MT470-G
- MT470
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- MT4435
- MT4420
- MT4410
- MT440-Y
- MT440-O
- MT440-G
- MT4409
- MT4407
- MT430-Y
- MT430-O
- MT430-G
MT48LC16M8A2数据表相关新闻
MT48LC32M16A2P-75
MT48LC32M16A2P-75
2022-10-28MT48LC32M16A2P-75 IT:C
原装代理
2022-8-17MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:GMICRON原装现货长期供应QQ：2880524286
2021-4-26MT48LC16M16A2P-7E:G 深圳旭亨半导体有限公司
MT48LC16M16A2P-7E:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC32M16A2P-75:C正品渠道 价格优势
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-11-6MT48LC16M16A2TG-6AIT:G顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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