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位置：首页 > IC中文资料第5865页 > MT48H8M32LF

MT48H8M32LF价格

参考价格：￥38.9904

型号：MT48H8M32LFB5-75:H 品牌：MICRON 备注：这里有MT48H8M32LF多少钱，2025年最近7天走势，今日出价，今日竞价，MT48H8M32LF批发/采购报价，MT48H8M32LF行情走势销售排行榜，MT48H8M32LF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MT48H8M32LF

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFBF-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

镁光

MT48H8M32LFB5-10 IT

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

ELPIDA

美光科技

MT48H8M32LFB5-10 IT TR

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

ELPIDA

美光科技

MT48H8M32LF产品属性

  • 类型

    描述

  • 型号

    MT48H8M32LF

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 256Mb

    16 Meg x 16, 8 Meg x 32 Mobile SDRAM

MT48H8M32LF供应商更多...

更新时间：2025-8-7 14:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富诚威科技有限公司
MT48H8M32LFB5-75IT
MICRON
24+
BGA
2195
原装正品!公司现货热卖!
询价
深圳市勤思达科技有限公司
MT48H8M32LFB5-75IT
MICRON
24+
N/A
8000
全新原装正品,现货销售
询价
深圳市能创芯电子科技有限公司
MT48H8M32LFB5-75IT:G
MICRON/镁光
23+
BGA
3500
询价
标准国际(香港)有限公司
MT48H8M32LFB5-75IT:G
MICRON TECHNOLOGY
0706,0708
99
公司优势库存 热卖中!
询价
深圳市佳鑫美电子科技有限公司
MT48H8M32LFB5
MICRON
24+
BGA
2568
原装优势!绝对公司现货
询价
深圳兆威电子有限公司
MT48H8M32LFB5-75IT:H
MICROM
22+
90-PinVFBGA
200000
原装正品现货,可开13点税
询价
上海意淼电子科技有限公司
MT48H8M32LFB5-75IT
MIT
23+
NA
12000
全新原装假一赔十
询价
深圳市美思瑞电子科技有限公司
MT48H8M32LFB5-10IT:G
MICRON
22+
BGA
5660
现货,原厂原装假一罚十!
询价
深圳市能元时代电子有限公司
MT48H8M32LFB5-6IT:H
MICRON
23+
BGA
12800
公司只有原装 欢迎来电咨询。
询价
深圳市明嘉莱科技有限公司
MT48H8M32LFB5-75IT:H
MICROM
2018+
TSOP56
880000
明嘉莱只做原装正品现货
询价

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