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位置：首页 > IC中文资料第5865页 > MT48H8M32LF

MT48H8M32LF价格

参考价格：￥38.9904

型号：MT48H8M32LFB5-75:H 品牌：MICRON 备注：这里有MT48H8M32LF多少钱，2025年最近7天走势，今日出价，今日竞价，MT48H8M32LF批发/采购报价，MT48H8M32LF行情走势销售排行榜，MT48H8M32LF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MT48H8M32LF

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-75G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-75ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-75LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-75LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-8G

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-8ITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-8LG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFBF-8LITG

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

Micron

美光

MT48H8M32LFB5-10 IT

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

ETC

知名厂家

MT48H8M32LFB5-10 IT TR

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

ETC

知名厂家

MT48H8M32LFB5-6:H

MOBILE SDRAM 256M X32 VFBGA

Micron

美光

MT48H8M32LFB5-75

LPDRAM

Micron

美光

MT48H8M32LFB5-75 IT

LPDRAM

Micron

美光

MT48H8M32LF产品属性

  • 类型

    描述

  • 型号

    MT48H8M32LF

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 256Mb

    16 Meg x 16, 8 Meg x 32 Mobile SDRAM

MT48H8M32LF供应商更多...

更新时间：2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MT48H8M32LFB5-75IT:H
micron(镁光)
24+
标准封装
27048
全新原装正品/价格优惠/质量保障
询价
深圳市得捷芯城科技有限公司
MT48H8M32LFF5-10
MRON/美光
24+
NA/
833
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市凌旭科技有限公司
MT48H8M32LFB5-75:H
MICRON
2016+
FBGA90
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
MT48H8M32LFB5-75IT
MIT
23+
NA
12000
全新原装假一赔十
询价
深圳市粤骏腾电子科技有限公司
MT48H8M32LFB5-75IT:H
MICRON/美光
24+
NA
20000
美光专营原装正品
询价
深圳市科芯源微电子有限公司
MT48H8M32LFB5-5IT
MICRON/美光
25+
BGA
996880
只做原装,欢迎来电资询
询价
深圳市威雅利发展有限公司
MT48H8M32LFB5-6IT:H
MICRON
1050+
BGA
649
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
谛辉(北京/上海/青岛 )电子科技有限公司
MT48H8M32LFF5-8/8IT
MICRON
25+
SOP
18000
原厂直接发货进口原装
询价
深圳市朱博士电子科技有限公司
MT48H8M32LFB5-75:H
MICRON
2526+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
深圳市毅创腾电子科技有限公司
MT48H8M32LFB5-8IT:G
MICRON
FBGA
1256
正品原装--自家现货-实单可谈
询价

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