256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 256MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

MOBILE SDRAM 256M X32 VFBGA

LPDRAM

LPDRAM