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MS10价格
参考价格：￥213.9291
型号：MS1000 品牌：Advanced Semiconductor, 备注：这里有MS10多少钱，2025年最近7天走势，今日出价，今日竞价，MS10批发/采购报价，MS10行情走势销售排行榜，MS10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MS10 | MS016 Due to their high breaking capacity with high current limitation, MS Guardamotors provide optimum protection for motors Electric, as well as other applications up to 25 amps. They are equipped with a device for sensitivity to phase failure, insulation and Mainly switch functions, 13 nominal curren | ALTECH |   | |
MS10 | Environmentally friendly 文件：541.16 Kbytes Page：2 Pages | LSTD 莱尔德 | | |
MS10 | 包装：散装 描述：MS10 MANUAL MOTOR CONTROLLER 63- 电路保护 断路器 | ALTECH | | |
MS10 | 其它工控产品 | ALTECH | | |
MS10 | MIS/MOS Single Layer Capacitors | ETC 知名厂家 | ETC | |
MS10 | 电源变压器 | Transfar 创四方电子 | | |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 28 VOLTS · IMD = -30 dB · GOLD METALLIZATION | ADPOW | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 12.5 VOLTS · IMD = -32 dBc · INFINITE VSWR CAPABILITY @ | ADPOW | | ||
10 AMP SCHOTTKY BARRIER RECTIFIERS 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIERS 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested) | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested) | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIERS 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested | Microsemi 美高森美 | | ||
Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molde | ISC 无锡固电 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested | Microsemi 美高森美 | | ||
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Met | ADPOW | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • POUT = 150 WATTS • GP = 14 dB MINIMUM • | ADPOW | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • IMD = –30 dB • POUT = 150 WATTS • GP = | ADPOW | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts | Microsemi 美高森美 | | ||
Schottky Barrier Rectifier FEATURES ·Guardring for overvoltage protection ·Low power loss, high efficiency ·Low forward voltage drop ·High forward surge capability APPLICATIONS ·Freewheeling diodes ·DC/DCconverters ·Polarity protection application | ISC 无锡固电 | | ||
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • OPTIMIZED FOR SSB • 30 MHz • 50 VOLTS • IMD — 30 dB • GOLD METALLIZATION | ADPOW | | ||
PNP RF Amplifier Transistor Surface Mount PNP RF Amplifier Transistor Surface Mount | LRC 乐山无线电 | | ||
PNP RF Amplifier Transistor Surface Mount PNP RF Amplifier Transistor Surface Mount | LRC 乐山无线电 | | ||
1 Amp Schottky Rectifier 1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts | Microsemi 美高森美 | | ||
10 AMP SCHOTTKY RECTIFIER 10 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● 150°C Junction Temperature ● Reverse Energy Tested | Microsemi 美高森美 | | ||
Schottky Barrier Rectifier FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
1 Amp Schottky Rectifier 1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 12.5 VOLTS • POU | ADPOW | | ||
RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 12.5 VOLTS • POU | Microsemi 美高森美 | | ||
1 Amp Schottky Rectifier 1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features · 30 MHz · 28 VOLTS · GOLD METALLIZATION · | ADPOW | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION • | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS DESCRIPTION The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30dB ◾ | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS DESCRIPTION The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30d | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 50 VOLTS • POUT = 220 W • GP = 13 dB MINIMUM • COMMON EMITTER CONFIGURATI | ADPOW | | ||
1 Amp Schottky Rectifier 1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts | Microsemi 美高森美 | | ||
1 Amp Schottky Rectifier 1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts | Microsemi 美高森美 | | ||
封装/外壳：M111 包装：托盘 描述：RF TRANS NPN 18V 175MHZ M111 分立半导体产品 晶体管 - 双极（BJT）- 射频 | Microsemi 美高森美 | | ||
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS 文件：97.3 Kbytes Page：3 Pages | ADPOW | | ||
Control IC 文件：1.2316 Mbytes Page：41 Pages | SHINDENGEN | | ||
10 AMP SCHOTTKY BARRIER RECTIFIER 文件：120.58 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
Schottky Barrier Rectifiers 文件：97.11 Kbytes Page：2 Pages | EIC | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
Schottky Barrier Rectifiers 文件：97.11 Kbytes Page：2 Pages | EIC | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
1.0A SCHOTTKY BARRIER DIODE 文件：135.2 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
Direct power switching 文件：80.76 Kbytes Page：2 Pages | CYNERGY3 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | | ||
Miniature Slides 文件：256.29 Kbytes Page：7 Pages | NKK 恩楷楷 | |
MS10产品属性
- 类型
描述
- 型号
MS10
- 功能描述
控制开关 MS10 Manual Motor Controller;6.3-10A/600V AC,cULus listed
- RoHS
否
- 制造商
Omron Industrial
- 控制类型
Emergency Stop
- 触点额定值
5 A at 125 VAC
- 触点形式
1 Form B(SPST-NC)
- 执行器
Pushbutton
- 照明
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MNOVR |
25 |
5791 |
原装正品 |
||||
AMPHENOL |
21+ |
标准封装 |
496 |
保证原装正品,需要请联系张小姐13544103396 |
|||
MICROSEMI/美高森美 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
瑞盟科技 |
25+ |
原装现货 |
15000 |
一级代理提供技术支持，可长期稳定供货 |
|||
MNOVR |
1736+ |
SOP16 |
15238 |
原厂优势渠道 |
|||
Relmon |
2023+ |
SSOP-28 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
杭州瑞盟 |
24+ |
QFN32(5x5) |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MNOVA |
2016+ |
SOP16 |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
|||
RUIMENG/瑞盟 |
24+ |
QFN32 |
40000 |
只做自己库存,全新原装进口正品假一赔百,可开38%增 |
|||
RUIMENG/瑞盟 |
25+ |
QFN32 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
MS10规格书下载地址
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- MS08568
- MS0850507F025C1A
- MS0850506F075P1A
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- MS0850505F075S1A
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- MS08441
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