RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 28 VOLTS · IMD = -30 dB · GOLD METALLIZATION

超声波测量模拟前端

MS1000TA是一款超声波测量模拟前端芯片，广泛应用于汽车工业和消费类电子。该芯片具有高度的灵活性，发射脉冲个数、频率、增益及信号阈值均可配置。同时，接收通道参数也可以灵活配置，从而适用于不同尺寸容器、不同液体介质的测量。MS1000TA有多种工作模式，从而最大化地降低功耗，所以它是低功耗流量计、距离测量等设备的理想选择。MS1000TA内置低噪声放大器，使其在低流量测量条件下，也可以实现非常低的噪声，从而保证皮秒级的分辨率和精确度。 • AEC-Q100认证\n• 测量距离：最大可达4毫秒×声速\n• 发射通道：支持单通道和双通道，频率范围31.25kHz到4MHz，最大可发射31个脉冲\n• 接收通道：STOP信号的抖动50ps，内置低噪声运放与可编程增益放大器，可通过外接滤波电路方式实现噪声滤波，比较器阈值可配置，双向/单端飞行时间测量可实现自动切换，可选择长距离测量模式或短距离测量模式\n• 温度测量：可接PT1000/500两种RTD电阻\n• 工作温度范围：-40°C 到125°C;

高温加速度计

新型 MS1000T 是同类中最好的 MEMS 加速度计，专为高温定向钻井应用而设计。\n该加速度计受益于 MS1000 和 TS1000T 系列，使其成为专为高温和钻孔市场制造的最佳 MEMS 产品。 • 高温范围：-40° 至 +175°C\n• 耐高重复性冲击：1'000g（500 次）\n• 低振动校正误差：<170μg/g2（±30g，典型值）;

超声波测量模拟前端，内部集成低噪声放大器，可编程增益放大器，温度传感器

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit board) • Wide voltage range: VZ = 2.0 V to 39 V • Easy-to-use because of the fine

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROMACHINED ACCELEROMETER

The XMMA series of silicon capacitive, micromachined accelerometers features; signal conditioning, a 4–pole low pass filter and temperature compensation. Zero–g offset full scale span and filter cut–off are factory set and require no external devices. A full system self–test capability verifies sy