RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30dB ◾

RF & MICROWAVE TRANSISTORS

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

0.28(7MM) SEVEN SEGMENT NUMERIC DISPLAY

DESCRIPTION The HD1075X/1077X are displays with 0.28 inch (7 mm) digits with either a common anode or common cathode and a right hand decimal point. FEATURES • Rugged Encapsulated Package • 0.28 Inch (7 mm) Digit Height • Choice of Colors • Common Anode or Common Cathode • Wide Viewing • I

0.28(7MM) SEVEN SEGMANT NUMERIC DISPLAY SOW CURRENT

WIDEBAND DIFFERENTIAL AMPLIFIER (DC TO 180 MHZ)

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SP4T Antenna Switch for GSM Dual band

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