RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features · 30 MHz · 28 VOLTS · GOLD METALLIZATION ·

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION •

RF/Microwave Si BJT Power Devices & Pallets

Datasheet: MS1076

封装/外壳：M174 包装：托盘 描述：RF TRANS NPN 35V 30MHZ M174 分立半导体产品 晶体管 - 双极（BJT）- 射频

包装：带 描述：RF POWER TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 射频

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

5A/2A Step-Down, PWM, Switch-Mode DC-DC Regulators

General Description The MXL1074/MXL1076 are monolithic, bipolar, pluse width modulation (PWM), switch-mode DC-DC regulators optimized for step-down applications. Applications    Distributed Power from High-Voltage Buses    High-Current, High-Voltage Step-Down Applications    High-Current Inve

Step-Down Switching Regulator

文件：215.29 Kbytes Page：16 Pages

Step-Down Switching Regulator

文件：215.29 Kbytes Page：16 Pages

Step-Down Switching Regulator

文件：215.29 Kbytes Page：16 Pages