10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Met

激光测距用高精度时间测量(TDC)电路

MS1006N是一款高精度时间测量(TDC)电路。对比MS1002具有更高的精度和更小的封装，对比MS1005可以实现更高的测量频率。\nMS1006N具有双通道、多脉冲的采样能力、高速SPI通讯、多种测量模式，适合于激光雷达和激光测距。 • 双通道单精度模式 60ps\n• 单通道双精度模式 30ps\n• 非校准测量范围 3.5ns(0ns)至 25μs\n• 单精度校准测量范围 3.5ns(0ns)至 16μs\n• 双精度校准测量范围 3.5ns 至 4μs\n• 20ns 最小脉冲间隔，双通道最多可接收\n20 个脉冲\n• 非校准模式下，对于单精度测量时间间\n隔在 3μs 以内，可以设置 REG[2] = 1，只\n读低 16 位结果，加快读取时间\n• 4 线 SPI 通信接口\n• 工作电压：2.5V 至 3.6V\n• 工作温度：-40°C 至+125°C\n• QFN20 封装;

封装/外壳：M135 包装：带 描述：RF TRANS NPN 55V 30MHZ M135 分立半导体产品 晶体管 - 双极（BJT）- 射频

Quasi-Resonant Power Supply ICs　SMD

Photo Interrupter

Photo Interrupter For contactless SW, object detection ■ Overview CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. Th

Integrated Circuit FM Multiplex Stereo Demodulator

Description: The NTE1006 is an integrated circuit in a 14–Lead DIP type package designed for use as an FM multiplex stereo demodulator. This device includes all the fundamental functions including a composite amp, doubler, decoder, separation controller, and lamp driver. Features: ● Suitable fo

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages