RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 12.5 VOLTS · IMD = -32 dBc · INFINITE VSWR CAPABILITY @

封装/外壳：M174 包装：托盘 描述：RF TRANS NPN 18V 30MHZ M174 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10-Bit P Compatible A/D Converter

文件：201.08 Kbytes Page：9 Pages

10-Bit P Compatible A/D Converter

文件：201.08 Kbytes Page：9 Pages