945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

Military Managed 24 X 1G Copper Ports 1G F/O Port 5 X 10G Copper Ports

PRODUCT DESCRIPTION Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial applications, including: • Armored ground vehicles • Land autonomous vehicles (UGVs) • Robots • Mobile equipment fielded in h

Snap Rivets

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Snap Rivets

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Snap Rivets – continued

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