945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

Radio Interface and Twin Synthesiser

ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone, circuits to demodulate the frequency modulated signal to audio, and a

Radio Interface and Twin Synthesiser

ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone, circuits to demodulate the frequency modulated signal to audio, and a

Low-Cost, Ultra-Small, Single/Dual/Quad Single-Supply Comparators

General Description The MAX9030/MAX9031/MAX9032/MAX9034 single/ dual/quad comparators are optimized for single-supply applications from +2.5V to +5.5V but can also be operated from dual supplies. These comparators have a 188ns propagation delay and consume 35µA of supply current per comparator

Low-Cost, Ultra-Small, Single/Dual/Quad Single-Supply Comparators

General Description The MAX9030/MAX9031/MAX9032/MAX9034 single/ dual/quad comparators are optimized for single-supply applications from +2.5V to +5.5V but can also be operated from dual supplies. These comparators have a 188ns propagation delay and consume 35µA of supply current per comparator

SMARTarget??I/O Accelerator

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