RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors

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封装/外壳：TO-270-2 包装：散装 描述：FET RF 65V 945MHZ TO272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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封装/外壳：TO-270AA 包装：散装 描述：FET RF 65V 945MHZ TO270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：536.35 Kbytes Page：16 Pages

RF Power Field Effect Transistors

文件：536.35 Kbytes Page：16 Pages

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

Military Managed 24 X 1G Copper Ports 1G F/O Port 5 X 10G Copper Ports

PRODUCT DESCRIPTION Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial applications, including: • Armored ground vehicles • Land autonomous vehicles (UGVs) • Robots • Mobile equipment fielded in h

Snap Rivets

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Snap Rivets

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Snap Rivets – continued

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