NPN SILICON RF LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. FEATURES INCLUDE: • Min gain 8.0 dB @ 750 mW/870 MHz • Silicon Nitride passivated • Low cost Plastic Package

NPN SILICON RF LOW POWER TRANSISTOR

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60 typical • R1 suffix – Tape and Reel, 500 units • R2 suffix – Tape and Reel, 2500 units

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF LOW POWER TRANSISTOR NPN SILICON

NPN SILICON LOW POWER TRANSISTOR

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

Panel Mount, Shocksafe Snap-In Type, 5x20mm Fuses

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PC Mount, Shocksafe 5x20mm Fuses

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Panel Mount , for 5x20mm Fuses

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PCB mount, vertical for 5x20 mm Fuses

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PC Mount, Shocksafe 5x20mm Fuses

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