RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60 typical • R1 suffix – Tape and Reel, 500 units • R2 suffix – Tape and Reel, 2500 units

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF LOW POWER TRANSISTOR NPN SILICON

NPN SILICON LOW POWER TRANSISTOR

RF/Microwave Si BJT Power Devices & Pallets

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

41 dB Range, 1 dB Step Size, Programmable Dual VGA

GENERAL DESCRIPTION The AD8372 is a dual, digitally controlled, variable gain amplifier that provides precise gain control, high IP3, and low noise figure. The excellent distortion performance and moderate signal bandwidth make the AD8372 a suitable gain control device for a variety of multicha

ONE WAY SERIES WIRE CONNECTOR

文件：89.11 Kbytes Page：1 Pages

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

Programmable Dual VGA

文件：751.28 Kbytes Page：16 Pages

Programmable Dual VGA

文件：751.28 Kbytes Page：16 Pages