NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60 typical • R1 suffix – Tape and Reel, 500 units • R2 suffix – Tape and Reel, 2500 units

丝印代码：8372；RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

NPN SILICON LOW POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges.FEATURES:\n• POUT = 750 mW\n• PG = 8.0 dB min.\n• η = 60% typical\n• R1 suffix – Tape and Reel, 500 units\n• R2 suffix – Tape and Reel, 2500 units

RF/Microwave Si BJT Power Devices & Pallets

RF LOW POWER TRANSISTOR NPN SILICON

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 16V 870MHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

4-Port FC/GE Retimer and FC-AL Port Bypass Controller

GENERAL • Supports 4 Fibre Channel Physical Interfaces at 1.0625 or 2.125 Gbit/s per Fibre Channel – Physical Interface (FC-PI) or 4 Gigabit Ethernet Retimers at 1.25 Gbit/s per IEEE 802.3z. • Each port supports FC 1G or 2G rate detection/auto-selection. • Supports Arbitrated Loop and Ret

16-BIT, 600-kHz, PSEUDO-DIFFERENTIAL INPUT, MICROPOWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH SERIAL INTERFACE AND REFERENCE

文件：782.92 Kbytes Page：29 Pages

16-BIT, 1-MSPS, PSEUDO-BIPOLAR, FULLY DIFFERENTIAL INPUT, MICROPOWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH PARALLEL INTERFACE, REFERENCE

文件：1.0495 Mbytes Page：30 Pages