The RF Line

NPN Silicon RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.

• Specified @ 12.5 V, 870 MHz Characteristics

Output Power = 750 mW

Minimum Gain = 8.0 dB

Efficiency 60 (Typ)

• State–of–the–Art Technology

Fine Line Geometry

Gold Top Metal and Wires

Silicon Nitride Passivated

Ion Implanted Arsenic Emitters

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

• Order MRF8372 in tape and reel packaging by adding suffix:

R1 suffix = 500 units per reel

R2 suffix = 2,500 units per reel