位置：首页 > IC中文资料第6851页 > MRF6S9060
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs | ETC 知名厂家 | ETC | | |
封装/外壳：TO-270-2 包装：卷带（TR） 描述：FET RF 68V 880MHZ TO-270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs | ETC 知名厂家 | ETC | | |
封装/外壳：TO-272BC 包装：卷带（TR） 描述：FET RF 68V 880MHZ TO-272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | ONSEMI 安森美半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：628.74 Kbytes Page：16 Pages | Fairchild 仙童半导体 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：628.74 Kbytes Page：16 Pages | Fairchild 仙童半导体 | | ||
RF Power Field Effect Transistor | ETC 知名厂家 | ETC | |
MRF6S9060产品属性
- 类型
描述
- 型号
MRF6S9060
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF Power Field Effect Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSL |
24+ |
NA/ |
59 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
22+ |
TO2722 |
9000 |
原厂渠道,现货配单 |
|||
MOTOROLA |
25+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCALE |
23+ |
高频管 |
650 |
专营高频管模块,全新原装! |
|||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FREESCALE |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
FREESCALE |
07+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FREESCALE |
25+ |
14 |
公司优势库存 热卖中! |
||||
FREESCALE/飞思卡尔 |
2402+ |
High-frequency |
8324 |
原装正品!实单价优! |
|||
FREESCALE |
22+ |
TO-272-2 |
2000 |
原装现货库存.价格优势 |
MRF6S9060芯片相关品牌
MRF6S9060规格书下载地址
MRF6S9060参数引脚图相关
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MRF6S9060数据表相关新闻
MRF6S9125N原装现货热卖
MRF6S9125N射频金属氧化物半导体场效应(RF MOSFET)晶体管
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2019-11-30
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