RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicatio

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

封装/外壳：TO-272BC 包装：卷带（TR） 描述：FET RF 68V 880MHZ TO-272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-270AA 包装：卷带（TR） 描述：FET RF 68V 880MHZ TO-270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：628.74 Kbytes Page：16 Pages

RF Power Field Effect Transistor