RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 21.4 dB

Drain Efficiency — 32.1

ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5 rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 63

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• N Suffix Indicates Lead-Free Terminations

• 200°C Capable Plastic Package

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.