The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common so

RF MOSFET

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common so

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes Page：8 Pages

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes Page：8 Pages

Mini-Clamp Socket

• Designed to accommodate typical wiring specifications per Japanese and Asian suppliers • Latches available for Panel Mount applications • No special wire preparation • Integrated cable retention • Design accepts multiple wire size diameters • Easy, quick, and reliable IDC termination using

Celeron M Processor on 90 nm Process

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SUBMINIATURE FUSES

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High Performance Box Sealing Tape

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Work horse clamp with increased performance and flexibility

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