The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

Output Power – 60 Watts

Power Gain – 13 dB

Efficiency – 50

• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

Output Power – 100 Watts (PEP)

Power Gain – 11.2 dB

Efficiency – 40

IMD – –30 dBc

• Excellent Thermal Stability

• 100 Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW

• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.