RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET