The RF MOSFET Line

RF Power Field Effect Transistors

N- Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 28/32 volt transmitter equipment.

• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture

Output Power ó 75 Watts

Power Gain ó 18.2 dB

Efficiency ó 60

• 100 Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW

• Integrated ESD Protection

• Excellent Thermal Stability

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.