RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes Page：8 Pages

RF POWER FIELD EFFECT TRANSISTORS

文件：336.49 Kbytes Page：8 Pages

High Voltage Darlington Transistors

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SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 4.0 V

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Complementary Transistors Audio Amplifier, Driver

Silicon Complementary Transistors Audio Amplifier, Driver