The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common so

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Mini-Clamp Socket

• Designed to accommodate typical wiring specifications per Japanese and Asian suppliers • Latches available for Panel Mount applications • No special wire preparation • Integrated cable retention • Design accepts multiple wire size diameters • Easy, quick, and reliable IDC termination using

Celeron M Processor on 90 nm Process

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SUBMINIATURE FUSES

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High Performance Box Sealing Tape

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Work horse clamp with increased performance and flexibility

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