The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common so

470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of thes devices make them ideal for large–signal, commo

High Voltage Darlington Transistors

High Voltage Darlington Transistors NPN Silicon

SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 4.0 V

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Complementary Transistors Audio Amplifier, Driver

Silicon Complementary Transistors Audio Amplifier, Driver