RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

RF Power Field Effect Transistors

文件：508.05 Kbytes Page：8 Pages

RF Power Field Effect Transistors

1800-1880 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

文件：508.05 Kbytes Page：8 Pages

RF Power Field Effect Transistors

文件：508.05 Kbytes Page：8 Pages

封装/外壳：NI-400S 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-400S 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-400S 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-400S 分立半导体产品 晶体管 - FET，MOSFET - 射频

1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifi

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

HTSNK, C LONG. .4H LOW FLOW, THRU HOLE

文件：64.26 Kbytes Page：1 Pages