SILICON RF POWER MOSFET

DESCRIPTION: The MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

RF Power FET 150W, to 150MHz, 50V

Designed primarily for linear large-signal output stages up to 150 MHz • Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.) • Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45 (

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ)

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (

150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWERFET

SILICON RF POWER MOSFET

DESCRIPTION:\nThe MRF150is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for\nWideband Large Signal Amplifier Applications From 2.0 to 150 MHz.

RF MOSFET

封装/外壳：211-11，2 型 包装：托盘 描述：FET RF 125V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power FET 150W, to 150MHz, 50V

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MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

RF POWER BIPOLAR TRANSISTORS

The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

RF POWER BIPOLAR TRANSISTORS

The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB am

LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and classAB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. • Specified 26 Volts, 1490 MHz, Class AB Cha

RF Power FET

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RF POWER TRANSISTOR

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HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 150A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC