The RF Sub–Micron Bipolar Line

RF Power Bipolar Transistors

Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment.

• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 10 dB

Efficiency — 33

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power