The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz frequency range.

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45 (Typ)

• Superior High Order IMD

• IMD(d3)(150 W PEP) — – 32 dB (Typ)

• IMD(d11)(150 W PEP) — – 60 dB (Typ)

• 100 Tested For Load Mismatch At All Phase Angles With 30:1 VSWR