The RF Line

NPN Silicon RF Power Transistor

Designed for 26 volts microwave large–signal, common emitter, class A and classAB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz.

• Specified 26 Volts, 1490 MHz, Class AB Characteristics

Output Power — 90 Watts (PEP)

Gain — 7.5 dB Min @ 90 Watts (PEP)

Collector Efficiency — 30 Min @ 90 Watts (PEP)

Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)

• Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE= 24 Vdc, IC= 5 Adc

• Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz

• Characterized with Small–Signal S–Parameters from 1000–2000 MHz

• Silicon Nitride Passivated

• 100 Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.