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MRF14价格
参考价格：￥411.8832
型号：MRF140 品牌：M/A-Com 备注：这里有MRF14多少钱，2025年最近7天走势，今日出价，今日竞价，MRF14批发/采购报价，MRF14行情走势销售排行榜，MRF14报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF14 | MRF14 Series Non-magnetic, High Durability Connector 文件：168.3 Kbytes Page：1 Pages | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 |   | |
N-CHANNEL MOS LINEAR RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ | Motorola 摩托罗拉 | | ||
N-CHANNEL MOS LINEAR RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ | MACOM | | ||
The RF MOSFET Line 150W, to 150MHz, 28V Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP): | MA-COM | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | Motorola 摩托罗拉 | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | MACOM | | ||
RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. | ASI | | ||
RF Power FET 150W, to 175MHz, 28V RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. | MA-COM | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | MACOM | | ||
RF Power FET 300W, 175MHz, 28V RF Power FET 300W, 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. • G | MA-COM | | ||
RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. | ASI | | ||
N-CHANNEL BROADBAND RF POWER MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | Motorola 摩托罗拉 | | ||
RF Power Field-Effect Transistor The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
RF Power Field-Effect Transistor The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
N-CHANNEL MOS LINEAR RF POWER FET The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow | Motorola 摩托罗拉 | | ||
N-Channel Enhancement Mode VHF POWER MOSFET DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 15 dB Typ. at 30 W /175 MHz • ηD = 50 Typ. at 30 W /30 MHz • Omnigold™ Metalization System | ASI | | ||
Linear RF Power FET 30W, to 175MHz, 50V Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.) | MA-COM | | ||
Designed for power amplifier applications in industrial Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
The RF MOSFET Line 150W, to 150MHz, 28V 文件：331.02 Kbytes Page：10 Pages | MA-COM | | ||
MRF140_15 文件：331.02 Kbytes Page：10 Pages | MA-COM | | ||
The RF MOSFET Line 文件：802.05 Kbytes Page：11 Pages | MA-COM | | ||
RF Power FET 150W, to 175MHz, 28V 文件：337.87 Kbytes Page：11 Pages | MA-COM | | ||
RF Power FET 文件：337.87 Kbytes Page：11 Pages | MA-COM | | ||
RF Power FET 文件：839.67 Kbytes Page：12 Pages | MA-COM | | ||
RF Power FET 300W, 175MHz, 28V 文件：431.73 Kbytes Page：11 Pages | MA-COM | | ||
封装/外壳：375-04 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 2CH 65V 175MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power FET 文件：431.73 Kbytes Page：11 Pages | MA-COM | | ||
包装：散装 描述：CONN JACK HSG 4POS 连接器，互连器件 矩形连接器外壳 | ETC 知名厂家 | ETC | | |
N-CHANNEL MOS LINEAR RF POWER FET 文件：169.68 Kbytes Page：6 Pages | MACOM | | ||
Linear RF Power FET 30W, to 175MHz, 50V 文件：285.74 Kbytes Page：7 Pages | MA-COM | | ||
Linear RF Power FET 文件：285.74 Kbytes Page：7 Pages | MA-COM | | ||
Linear RF Power FET 文件：711.88 Kbytes Page：8 Pages | MA-COM | |
MRF14产品属性
- 类型
描述
- 型号
MRF14
- 制造商
M/A-COM Technology Solutions
- 功能描述
TRANS MOSFET N-CH 65V 16A 4PIN P208 - Bulk
- 制造商
M/A-COM Technology Solutions
- 功能描述
RF POWER TRANSISTOR MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
24+ |
TO-59 |
4120 |
郑重承诺只做原装进口现货 |
|||
MOTOROLA |
15+ |
6698 |
|||||
M/A-COM |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
LT |
23+ |
SOP |
12000 |
全新原装假一赔十 |
|||
TYCO |
三年内 |
1983 |
只做原装正品 |
||||
M/A-COM |
21+ |
SMD |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MACOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
最新 |
2000 |
原装正品现货 |
|||||
M/A-COM |
23+ |
SMD |
30000 |
代理全新原装现货,价格优势 |
|||
M/A-COM |
2021+ |
CASE211 |
3000 |
十年专营原装现货,假一赔十 |
MRF14规格书下载地址
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