N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 15 dB Typ. at 30 W /175 MHz • ηD = 50 Typ. at 30 W /30 MHz • Omnigold™ Metalization System

Linear RF Power FET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

Designed for power amplifier applications in industrial

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

Linear RF Power MOSFET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. ·Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)\n·100%Test for Load Mismatch at allPhase Angel with 30:1 VSWR\n·Lower Reverse Transfer Capacitance (3.0 pF typ.)\n·Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40

封装/外壳：211-07 包装：托盘 描述：FET RF 120V 175MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-Channel Enhancement Mode VHF POWER MOSFET

Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07

Linear RF Power FET 30W, to 175MHz, 50V

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Linear RF Power FET

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Linear RF Power FET

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N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

VHF variable capacitance diode

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

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