The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz frequency range.

• Specified 28 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 15 dB (Typ)

Efficiency = 40 (Typ)

• Superior High Order IMD

• IMD(d3) (150 W PEP) — –30 dB (Typ)

• IMD(d11) (150 W PEP) — –60 dB (Typ)

• 100 Tested For Load Mismatch At All Phase Angles With 30:1 VSWR