N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP):

The RF MOSFET Line 150W, to 150MHz, 28V

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封装/外壳：211-11，2 型 包装：托盘 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 30W, to 400MHz, 28V

MRF140_15

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The RF MOSFET Line

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1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

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Mechanical stops on request

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Temperature Sensors Line Guide

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