The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP):

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

The RF MOSFET Line 30W, to 400MHz, 28V

Designed primarily for linear large–signal output stages up to Product Image 150 MHz frequency range. ·N–Channel Enhancement Mode\n·IMD(d11) (150 W PEP): –60 dB (Typ.)\n·Superior High Order IMD\n·Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)\n·100%Test for Load Mismatch at all Phase with 30:1 VSWR\n·IMD(d3) (150 W PE;

封装/外壳：211-11，2 型 包装：托盘 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 150W, to 150MHz, 28V

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MRF140_15

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The RF MOSFET Line

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Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP