MRF136价格
参考价格：￥166.6285
型号：MRF136 品牌：M/A-Com 备注：这里有MRF136多少钱，2026年最近7天走势，今日出价，今日竞价，MRF136批发/采购报价，MRF136行情走势销售排行榜，MRF136报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF136 | N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136 | MOTOROLA 摩托罗拉 |   | |
MRF136 | N-CHANNEL MOS BROADBAND RF POWER FET The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = | MACOM | | |
MRF136 | The RF MOSFET Line 15W, to 400MHz, 28V The RF MOSFET Line 15W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficien | MA-COM | | |
MRF136 | RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. | ASI | | |
MRF136 | RF Power Field-Effect Transistors The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MRF136 | The RF MOSFET Line 文件：604.32 Kbytes Page：12 Pages | MA-COM | | |
MRF136 | 封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 400MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF136 | RF POWER FIELD-EFFECT TRANSISTOR | ASI Semiconductor | | |
MRF136 | N-CHANNEL MOS BROADBAND RF POWER FETs | ETC 知名厂家 | ETC | |
MRF136 | Trans RF MOSFET N-CH 65V 2.5A 4-Pin Case 211-07 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
RF Power Field-Effect Transistors The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
The RF MOSFET Line 30W, to 400MHz, 28V The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband | MA-COM | | ||
N-CHANNEL MOS BROADBAND RF POWER FET The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power = | MACOM | | ||
The RF MOSFET Line 文件：604.32 Kbytes Page：12 Pages | MA-COM | | ||
The RF MOSFET Line 文件：1.1325 Mbytes Page：13 Pages | MA-COM | | ||
The RF MOSFET Line 文件：412.47 Kbytes Page：10 Pages | MA-COM | | ||
封装/外壳：319B-02 包装：托盘 描述：FET RF 65V 400MHZ 319B-02 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
The RF MOSFET Line 文件：412.47 Kbytes Page：10 Pages | MA-COM | | ||
The RF MOSFET Line 文件：903.5 Kbytes Page：11 Pages | MA-COM | | ||
POWER TRANSISTORS(8.0A,60-100V,70W) PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS | MOSPEC 统懋 | | ||
2.5V REFERENCE DIODE 文件：108.67 Kbytes Page：8 Pages | NSC 国半 | | ||
2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5 文件：110.36 Kbytes Page：8 Pages | NSC 国半 | | ||
2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5 文件：110.36 Kbytes Page：8 Pages | NSC 国半 | |
MRF136产品属性
- 类型
描述
- Min Frequency(MHz)：
5
- Max Frequency(MHz)：
400
- Bias Voltage(V)：
28.0
- Pout(W)：
15.00
- Gain(dB)：
13.00
- Efficiency(%)：
50
- Type：
TMOS
- Package：
Flange Ceramic Pkg
- Package Category：
Ceramic Flange Mount
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
26+ |
319B-02,Style-1 |
10548 |
原厂订货渠道,支持账期,一站式服务! |
|||
MACOM |
04+ |
高频管 |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MACOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MOT |
06+ |
TO59 |
2500 |
原装现货价格有优势量大可以发货 |
|||
MOT |
25+ |
4 |
公司优势库存 热卖中!! |
||||
MACOM |
25+ |
TO-59 |
1200 |
全新原装现货,价格优势 |
|||
MOTOROLA |
25+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
|||
M/A-COM |
NA |
345 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
PHI |
23+ |
高频管 |
655 |
专营高频管模块,全新原装! |
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MRF136规格书下载地址
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