N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain =

The RF MOSFET Line 15W, to 400MHz, 28V

The RF MOSFET Line 15W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficien

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.

RF Power Field-Effect Transistors

The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

The RF MOSFET Line

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封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 400MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD-EFFECT TRANSISTOR

N-CHANNEL MOS BROADBAND RF POWER FETs

Trans RF MOSFET N-CH 65V 2.5A 4-Pin Case 211-07

RF Power Field-Effect Transistors

The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

The RF MOSFET Line 30W, to 400MHz, 28V

The RF MOSFET Line 30W, to 400MHz, 28V Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode • Guaranteed 28 volt, 150 MHz performance Output power = 30 Watts Broadband

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance Output Power =

The RF MOSFET Line

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The RF MOSFET Line

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The RF MOSFET Line

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封装/外壳：319B-02 包装：托盘 描述：FET RF 65V 400MHZ 319B-02 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

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The RF MOSFET Line

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POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

2.5V REFERENCE DIODE

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2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

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2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages