The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-Mode MOSFET

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance

Output Power = 30 Watts

Broadband Gain = 14 dB (Typ)

Efficiency = 54 (Typical)

• Small–Signal and Large–Signal

Characterization

• 100 Tested For Load

Mismatch At All Phase

Angles With 30:1 VSWR

• Space Saving Package For

Push–Pull Circuit

Applications

• Excellent Thermal Stability,

Ideally Suited For Class A

Operation

• Facilitates Manual Gain

Control, ALC and

Modulation Techniques