The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

• Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60 (Typical)

• Small–Signal and Large–Signal Characterization

• 100 Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

• Excellent Thermal Stability, Ideally Suited For Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques