The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS

. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance

MRF136 MRF136Y

Output Power = 15 Watts Output Power = 30 Watts

Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ)

Efficiency = 60 (Typical) Efficiency = 54 (Typical)

• Small–Signal and Large–Signal Characterization

• 100 Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

• Space Saving Package For Push–Pull Circuit Applications — MRF136Y

• Excellent Thermal Stability, Ideally Suited For Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques