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MBRD1035价格
参考价格：￥1.3461
型号：MBRD1035CTLG 品牌：ONSemi 备注：这里有MBRD1035多少钱，2024年最近7天走势，今日出价，今日竞价，MBRD1035批发/采购报价，MBRD1035行情走势销售排行榜，MBRD1035报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SWITCHMODE??SchottkyRectifierD2PAKPowerSurfaceMountPackage SWITCHMODESchottkyPowerRectifier DPAKPowerSurfaceMountPackage ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvol | MotorolaMotorola, Inc 摩托罗拉 |  |   | |
10ASURFACEMOUNTDUALSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionfor TransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •VeryLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequency Inverters,OR’ing,andPolarityProtection Applications •PlasticMaterial:ULFlamma | DIODESDiodes Incorporated 达尔科技 |  | | |
SWITCHMODESchottkyPowerRectifier Switch-modeSchottkyPowerRectifier DPAKPowerSurfaceMountPackage TheMBRD1035CTLemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedfo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
SchottkyPowerRectifier,SwitchMode,10A,35V TheMBRD1035CTLemploystheSchottkyBarrierprincipleina largeareametal−to−siliconpowerdiode.Stateoftheartgeometry featuresepitaxialconstructionwithoxidepassivationandmetal overlaycontact.Ideallysuitedforlowvoltage,highfrequency switchingpowersupplies,freewheelin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SchottkyPowerRectifier,SwitchMode,10A,35V TheMBRD1035CTLemploystheSchottkyBarrierprincipleina largeareametal−to−siliconpowerdiode.Stateoftheartgeometry featuresepitaxialconstructionwithoxidepassivationandmetal overlaycontact.Ideallysuitedforlowvoltage,highfrequency switchingpowersupplies,freewheelin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SchottkyPowerRectifier,SwitchMode,10A,35V TheMBRD1035CTLemploystheSchottkyBarrierprincipleina largeareametal−to−siliconpowerdiode.Stateoftheartgeometry featuresepitaxialconstructionwithoxidepassivationandmetal overlaycontact.Ideallysuitedforlowvoltage,highfrequency switchingpowersupplies,freewheelin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier Switch-modeSchottkyPowerRectifier DPAKPowerSurfaceMountPackage TheMBRD1035CTLemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedfo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
10ASURFACEMOUNTDUALSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionfor TransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •VeryLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequency Inverters,OR’ing,andPolarityProtection Applications •PlasticMaterial:ULFlamma | DIODESDiodes Incorporated 达尔科技 | | | |
SWITCHMODESchottkyPowerRectifier Switch-modeSchottkyPowerRectifier DPAKPowerSurfaceMountPackage TheMBRD1035CTLemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedfo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier Switch-modeSchottkyPowerRectifier DPAKPowerSurfaceMountPackage TheMBRD1035CTLemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedfo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier Switch-modeSchottkyPowerRectifier DPAKPowerSurfaceMountPackage TheMBRD1035CTLemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.Stateoftheartgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedfo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SchottkyPowerRectifier,SwitchMode,10A,35V TheMBRD1035CTLemploystheSchottkyBarrierprincipleina largeareametal−to−siliconpowerdiode.Stateoftheartgeometry featuresepitaxialconstructionwithoxidepassivationandmetal overlaycontact.Ideallysuitedforlowvoltage,highfrequency switchingpowersupplies,freewheelin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SchottkyDiodes 文件：1.24189 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SWITCHMODESchottkyPowerRectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Switch-modeSchottkyPowerRectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Switch-modeSchottkyPowerRectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Switch-modeSchottkyPowerRectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 35V 5A DPAK 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
包装：卷带（TR） 描述：DIODE SCHOTTKY DPAK 分立半导体产品 二极管 - 整流器 - 阵列 | PAMDiodes Incorporated 龙鼎威 |  | | |
SWITCHMODESchottkyPowerRectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SWITCHMODESchottkyPowerRectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Switch-modeSchottkyPowerRectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Inst,1Pr#16StrBC,PVCInsE1,BlkPVCJkt,300VPLTCITCCMG ProductDescription ULInstrumentation,1Pair16AWG(7x24)BareCopper,PVCInsulationE1ColorCode,BlackPVCOuterJacket,PLTCITCCMGAWM2464SUNRES | BELDEN Belden Inc. |  | | |
1035DDualStepDriveFull&HalfStepping1.0amps,35VDC Features •Accepts12–35VDCpowersupply(including ripple) •Adjustablemotorcurrent:0to1.0amps/phase. •Fullorhalfstep(jumperselectable),quarter steppingavailableforOEM •Compactsize(1.0x2.4x3.55inches) •MountsonDINrail •Opticallyisolated5–24Vstepanddi | AMPAMP Incorporated 安普 |  | | |
35Watts,50VoltsAvionics1025-1150MHz GENERALDESCRIPTION The1035MPisaCOMMONBASEbipolartransistor.Itisdesignedforpulsedsystemsinthefrequencyband1025-1150MHz.Thedevicehasgoldthin-filmmetallizationforprovenhighestMTTF.Thetransistorincludesinputprematchforbroadbandcapability.Lowthermalresistance | ADPOW Advanced Power Technology |  | | |
Cost-efficientandcomplete-anSMTGPSantennamodule 文件：142.9 Kbytes Page：2 Pages | VINCOTECHVincotech Vincotech |  | | |
10TO1000MHzTO-8CASCADABLEAMPLIFIERS 文件：133.47 Kbytes Page：2 Pages | TELEDYNE TELEDYNE |  | |
MBRD1035产品属性
- 类型
描述
- 型号
MBRD1035
- 制造商
ON Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2020+ |
SOT-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ONSemiconduc |
2020+ |
TO252 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
2020+ |
TO-252 |
35000 |
100%进口原装正品公司现货库存 |
|||
MOT/ON |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
|||
DIODES |
2018+ |
SOT-252 |
25000 |
一级专营品牌全新原装热卖 |
|||
ON(安森美) |
6000 |
||||||
ON |
23+ |
TO-252 |
6893 |
||||
ON |
22+23+ |
TO-252 |
33177 |
绝对原装正品全新进口深圳现货 |
|||
ON |
2016+ |
TO252 |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
ONSemiconductor |
2000 |
TO252 |
2085 |
原装现货海量库存欢迎咨询 |
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MBRD1035规格书下载地址
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肖特基二极管与整流器10A45V
2019-8-6
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