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位置：首页 > IC中文资料 > MBRD1035

MBRD1035价格

参考价格：￥1.3461

型号：MBRD1035CTLG 品牌：ONSemi 备注：这里有MBRD1035多少钱，2026年最近7天走势，今日出价，今日竞价，MBRD1035批发/采购报价，MBRD1035行情走势销售排行榜，MBRD1035报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRD1035

10A,35V,Schottky Barrier Rectifiers

GALAXY

银河微电

MBRD1035CTL

Schottky Power Rectifier

FEATURES · Low Forward Voltage Drop · Guarding for Stress Protection · Low Power Losses, High Efficiency APPLICATIONS · Switching Power Supplies · Converters · Freewheeling Diodes

ISC

无锡固电

MBRD1035CTL

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半导体

MBRD1035CTL

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MOTOROLA

摩托罗拉

MBRD1035CTL

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

DIODES

美台半导体

MBRD1035CTL

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

ONSEMI

安森美半导体

MBRD1035CTL_V01

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半导体

MBRD1035CTLG

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半导体

MBRD1035CTLG

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

ONSEMI

安森美半导体

MBRD1035CTL-T

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

DIODES

美台半导体

MBRD1035CTLT4

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

ONSEMI

安森美半导体

MBRD1035CTLT4G

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

ONSEMI

安森美半导体

MBRD1035CTLT4G

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半导体

MBRD1035CTLT4G

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

ONSEMI

安森美半导体

MBRD1035C

Schottky Diodes

文件：1.24189 Mbytes Page：3 Pages

KEXIN

科信电子

MBRD1035CTL

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTL

SWITCHMODE™ Schottky Rectifier D2PAK Power Surface Mount Package

ETC

知名厂家

MBRD1035CTL

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTL_10

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTL_16

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 35V 5A DPAK 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBRD1035CTLG

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTL-T

包装：卷带（TR） 描述：DIODE SCHOTTKY DPAK 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBRD1035CTL-T

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

DIODES

美台半导体

MBRD1035CTLT4

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTLT4G

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBRD1035CTLT4G

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MBR1035

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MOTOROLA

摩托罗拉

MRF1035

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MRF1035MB

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

SBD1035CT

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

MBRD1035产品属性

  • 类型

    描述

  • AEC Qualified：

    NO

  • Pb Free：

    YES

  • Halide free：

    YES

  • Reach：

    YES

  • RoHS：

    YES

  • Marketing Status：

    Active

  • Configuration：

    Single

  • VRRM(V)max.：

    35

  • IF(A)max.：

    10

  • VF (V)max：

    0.7

  • IFSM(A)max.：

    150

  • IR(uA)max.：

    100

  • TJ(°C)max.：

    150

  • TJ(°C)min.：

    -55

  • ECCN(US)：

    EAR99

  • Category：

    功率肖特基二极管

MBRD1035供应商更多...

更新时间：2026-5-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MBRD1035CTL
ON(安森美)
24+
标准封装
10048
全新原装正品/价格优惠/质量保障
询价
中天科工半导体（深圳）有限公司
MBRD1035LT4G
ONSEMI/安森美
25+
TO-252
32360
ONSEMI/安森美全新特价MBRD1035LT4G即刻询购立享优惠#长期有货
询价
深圳市英博尔电子有限公司
MBRD1035CTLT4G
ON
22+
TO-252
15000
原装优质现货订货渠道商
询价
深圳市科恒伟业电子有限公司
MBRD1035LT4G
ON
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
深圳市振宏微科技有限公司
MBRD1035CTLT4G
ON/安森美
23+
NA
7825
原装正品!清仓处理!
询价
深圳市天芯威科技有限公司
MBRD1035CTLT4G
ON(安森美)
23+
25900
新到现货,只有原装
询价
深圳市明嘉莱科技有限公司
MBRD1035CTLT4G
ONSEMI/安森美
2025
明嘉莱只做原装正品现货
2510000
TO-252-2(DPAK)
询价
深圳市坤融电子科技有限公司
MBRD1035CTLT4G
ONSEMI/安森美
2025+
TO252
2143
原装进口价格优 请找坤融电子!
询价
深圳市壹芯创科技有限公司
MBRD1035CTLT4G
ON
24+
T0-252
5000
原装现正品可看现货
询价
深圳市中联芯电子有限公司
MBRD1035CTL
DIODE
25+
TO-252
12000
原厂原装渠道刚到新货假一罚十
询价

MBRD1035芯片相关品牌

MBRD1035规格书下载地址

MBRD1035参数引脚图相关

MBRD1035数据表相关新闻

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