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MBRD1035C价格
参考价格：￥1.3461
型号：MBRD1035CTLG 品牌：ONSemi 备注：这里有MBRD1035C多少钱，2025年最近7天走势，今日出价，今日竞价，MBRD1035C批发/采购报价，MBRD1035C行情走势销售排行榜，MBRD1035C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRD1035C | Schottky Diodes 文件：1.24189 Mbytes Page：3 Pages | KEXIN 科信电子 |   | |
SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol | Motorola 摩托罗拉 | | ||
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma | DIODES 美台半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma | DIODES 美台半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo | ONSEMI 安森美半导体 | | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE™ Schottky Rectifier D2PAK Power Surface Mount Package | ETC 知名厂家 | ETC | | |
Schottky Power Rectifier, Switch-mode, 10 A, 35 V | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 35V 5A DPAK 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER | DIODES 美台半导体 | | ||
包装：卷带（TR） 描述：DIODE SCHOTTKY DPAK 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SWITCHMODE Schottky Power Rectifier 文件：117.22 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Switch-mode Schottky Power Rectifier 文件：74.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Inst, 1 Pr #16 Str BC, PVC Ins E1, Blk PVC Jkt, 300V PLTC ITC CMG Product Description UL Instrumentation, 1 Pair 16AWG (7x24) Bare Copper, PVC Insulation E1 Color Code, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES | BELDEN 百通 | | ||
1035D Dual Step Drive Full & Half Stepping 1.0 amps, 35 VDC Features • Accepts 12 – 35 VDC power supply (including ripple) • Adjustable motor current: 0 to 1.0 amps/phase. • Full or half step (jumper selectable), quarter stepping available for OEM • Compact size (1.0 x 2.4 x 3.55 inches) • Mounts on DIN rail • Optically isolated 5 – 24V step and di | AMP | | ||
35 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance | ADPOW | | ||
Cost-efficient and complete-an SMT GPS antenna module 文件：142.9 Kbytes Page：2 Pages | VINCOTECH 威科电子 | | ||
10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIERS 文件：133.47 Kbytes Page：2 Pages | TELEDYNE 华特力科 | |
MBRD1035C产品属性
- 类型
描述
- 型号
MBRD1035C
- 功能描述
肖特基二极管与整流器 10A 35V Low Vf
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
32360 |
ONSEMI/安森美全新特价MBRD1035CTLT4G即刻询购立享优惠#长期有货 |
|||
ON |
13+ |
TO252 |
2303 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
18+ |
T0-252 |
10666 |
全新原装现货,可出样品,可开增值税发票 |
|||
ON(安森美) |
23+ |
14726 |
公司只做原装正品,假一赔十 |
||||
ON |
23+ |
TO252 |
2303 |
正规渠道,只有原装! |
|||
ON |
22+ |
TO-252 |
15000 |
原装优质现货订货渠道商 |
|||
ON |
23+ |
DPAK |
56000 |
||||
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ONSEMI/安森美 |
2025 |
明嘉莱只做原装正品现货 |
2510000 |
TO-252-2(DPAK) |
MBRD1035C规格书下载地址
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肖特基二极管与整流器 10A 45V
2019-8-6
DdatasheetPDF页码索引
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