M58WR064数据表ic资料现货供应价格意法半导体-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
M58WR064	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EBZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ETZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064E-ZBT	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FTB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBE	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBF	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB70ZB6	IC FLASH 64M PARALLEL 56VFBGA	Micron 美光	Micron
M58WR064EB70ZB6T	封装/外壳：56-VFBGA 包装：托盘描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET70ZB6T	封装/外壳：56-VFBGA 包装：托盘描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064HB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories	Micron 美光	Micron
M58WR064HB60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX

M58WR064产品属性

类型
描述
型号
M58WR064
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
64 Mbit(4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

M58WR064供应商更多...

更新时间：2025-12-29 8:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市诺美思科技有限公司	M58WR064KT70ZB6F	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市中赛美电子科技有限公司	M58WR064KB7AZB6E	MICRON/美光	22+	NA	3000	支持任何机构检测只做原装正品	询价
深圳市胜彬电子有限公司	M58WR064KT70ZB6F	ST/意法	22+	VFBGA56	3000	原装正品,支持实单	询价
深圳市英科美电子有限公司	M58WR064KT70ZB6F	ST/意法	2223+	VFBGA56	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳瞄钧科技有限公司	M58WR064	ST	24+	BGA	20000	低价现货抛售(美国香港新加坡)	询价
深圳诚思涵科技有限公司	M58WR064ET70ZB6T	STMicroelectronics	18+	ICFLASH64MBIT70NS56VFBGA	6800	公司原装现货	询价
深圳市粤骏腾电子科技有限公司	M58WR064KB70ZB6F	MICRON/美光	24+	NA	20000	美光专营原装正品	询价
瀚佳科技(深圳)有限公司	M58WR064KB7AZB6	ST	24+	BGA	35200	一级代理/放心采购	询价
深圳市斌腾达科技有限公司	M58WR064KU70ZA6E	Micron Technology Inc.	21+	78-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市卓越微芯电子有限公司	M58WR064KB70ZB6E	MICRON	25+	BGA	1991	百分百原装正品真实公司现货库存本公司只做原装可	询价

M58WR064芯片相关品牌

M58WR064规格书下载地址

M58WR064参数引脚图相关

M58WR064数据表相关新闻

M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

M58WR064产品属性

M58WR064供应商更多...

M58WR064芯片相关品牌

M58WR064规格书下载地址

M58WR064参数引脚图相关

M58WR064数据表相关新闻

M5838

M5836

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引