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型号	功能描述	生产厂家企业	LOGO
M58WR064	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EBZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ETZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064E-ZBT	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FTB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBE	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBF	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB70ZB6	IC FLASH 64M PARALLEL 56VFBGA	Micron 美光	Micron
M58WR064EB70ZB6T	封装/外壳：56-VFBGA 包装：托盘描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET70ZB6T	封装/外壳：56-VFBGA 包装：托盘描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064HB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories	Micron 美光	Micron
M58WR064HB60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX
M58WR064HB70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages	NUMONYX	NUMONYX

M58WR064产品属性

类型
描述
型号
M58WR064
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
64 Mbit(4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

M58WR064供应商更多...

更新时间：2025-12-28 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M58WR064KT70ZB6F	ST/意法	24+	NA/	5000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	M58WR064KB70ZB6E	micron(镁光)	24+	标准封装	19038	全新原装正品/价格优惠/质量保障	询价
深圳市亿联芯电子科技有限公司	M58WR064KT70ZB6F	ST/意法	2023+	VFBGA56	2255	专注全新正品,优势现货供应	询价
瀚佳科技(深圳)有限公司	M58WR064KB7AZB6	ST	24+	BGA	35200	一级代理/放心采购	询价
深圳市胜彬电子有限公司	M58WR064KT70ZB6F	ST/意法	22+	VFBGA56	3000	原装正品,支持实单	询价
深圳市恒达亿科技有限公司	M58WR064FP-70ZB6	ST	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市冠亿通科技有限公司	M58WR064KT70ZB6FTR	Micron	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市向鸿伟业电子有限公司	M58WR064HB70ZB6E	ST/意法	2402+	VFBGA56	8324	原装正品!实单价优!	询价
深圳市金华微盛电子有限公司	M58WR064FB60ZB6F	ST	19+	BGA	24000		询价
深圳市一线半导体有限公司	M58WR064		24+		3000	公司存货	询价

M58WR064芯片相关品牌

M58WR064规格书下载地址

M58WR064参数引脚图相关

M58WR064数据表相关新闻

M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7

DdatasheetPDF页码索引

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M58WR064产品属性

M58WR064供应商更多...

M58WR064芯片相关品牌

M58WR064规格书下载地址

M58WR064参数引脚图相关

M58WR064数据表相关新闻

M5838

M5836

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引