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位置：首页 > IC中文资料第10962页 > M58WR064

型号 功能描述 生产厂家&企业 LOGO 操作
M58WR064

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064B

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064B100ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064B70ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064B85ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EB10ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EB70ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EB80ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EBZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ET

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ET10ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ET70ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ET80ZB6T

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ETZB

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064E-ZBT

64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB60ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB60ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB60ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB60ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB70ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB70ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB70ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB70ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB80ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB80ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB80ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FB80ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT60ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT60ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT60ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT60ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT70ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT70ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT70ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT70ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT80ZB6

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT80ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT80ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FT80ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064FTB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064F-ZB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064F-ZBE

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064F-ZBF

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064F-ZBT

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064T100ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064T70ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064T85ZB6T

64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064EB70ZB6T

封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064ET70ZB6T

封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58WR064HB

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.02336 Mbytes Page：111 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HB60ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.02336 Mbytes Page：111 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HB60ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.02336 Mbytes Page：111 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HB70ZB6E

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.02336 Mbytes Page：111 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HB70ZB6F

64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.02336 Mbytes Page：111 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HL

64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.08426 Mbytes Page：114 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HL70ZB6E

64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.08426 Mbytes Page：114 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
M58WR064HL70ZB6U

64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories

文件：2.08426 Mbytes Page：114 Pages

NUMONYXNUMONYX

恒忆

NUMONYX

M58WR064产品属性

  • 类型

    描述

  • 型号

    M58WR064

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit(4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

M58WR064供应商更多...

更新时间：2024-5-28 18:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市环球伟业电子有限公司
M58WR064
STM/STMicroelectronics/意法半
21+
BGA
9
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市大联智电子有限公司
M58WR064-EB70ZB6
NA
22+
N/A
354000
询价
深圳市博浩通科技有限公司
M58WR064
ST
23+
BGA
20000
全新原装热卖/假一罚十!更多数量可订货
询价
深圳市中赛美电子科技有限公司
M58WR064KB7AZB6E
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
询价
深圳市高捷芯城科技有限公司
M58WR064KB70ZB6E
micron(镁光)
23+
标准封装
19038
全新原装正品/价格优惠/质量保障
询价
深圳市亿鸿丰电子科技有限公司
M58WR064
ST
BGA
6000
原装现货,长期供应,终端可账期
询价
深圳市振宏微科技有限公司
M58WR064
ST
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
深圳市瑞浩芯科技有限公司
M58WR064
ST
20+
BGA
25000
全新原装现货,假一赔十
询价
深圳市科恒伟业电子有限公司
M58WR064EB70ZB6
ST
2016+
BGA
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
深圳市豪迈兴电子有限公司
M58WR064EB70ZB6
ST
2339+
BGA
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价

M58WR064芯片相关品牌

  • ANAREN
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  • COMCHIP
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  • Cypress
  • freescale
  • ILSI
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  • WALSIN
  • WURTH

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