| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58WR064 | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 |   | |
M58WR064 | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
IC FLASH 64M PARALLEL 56VFBGA | MICRON 美光 | | ||
封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories | MICRON 美光 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | |
M58WR064产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
64Mb （4M x 16）
- 时钟频率：
66MHz
- 写周期时间 - 字，页：
70ns
- 访问时间：
70ns
- 存储器接口：
并联
- 电压 - 电源：
1.65V ~ 2.2V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
56-VFBGA
- 供应商器件封装：
56-VFBGA（7.7x9）
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
19038 |
全新原装正品/价格优惠/质量保障 |
|||
ST |
24+ |
BGA |
35200 |
一级代理/放心采购 |
|||
ST/意法 |
22+ |
VFBGA56 |
3000 |
原装正品,支持实单 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
2402+ |
VFBGA56 |
8324 |
原装正品!实单价优! |
|||
ST |
19+ |
BGA |
24000 |
||||
24+ |
3000 |
公司存货 |
|||||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
ST/意法 |
26+ |
VFBGA56 |
2255 |
专注全新正品,优势现货供应 |
|||
ST/意法 |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
M58WR064芯片相关品牌
M58WR064规格书下载地址
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- M58WR064FB70ZB6
- M58WR064FB60ZB6T
- M58WR064FB60ZB6F
- M58WR064FB60ZB6E
- M58WR064FB60ZB6
- M58WR064ET70ZB6T
- M58WR064ET
- M58WR064EBZB
- M58WR064EB85ZB6T
- M58WR064EB80ZB6T
- M58WR064EB70ZB6T
- M58WR064EB70ZB6
- M58WR064EB10ZB6T
- M58WR064EB
- M58WR064B85ZB6T
- M58WR064B70ZB6T
- M58WR064B100ZB6T
- M58WR032QU70ZA6U
- M58WR032QT80ZB6T
- M58WR032QT80ZB6F
- M58WR032QT80ZB6E
- M58WR032QT80ZB6
- M58WR032QT70ZB6T
- M58WR032QT70ZB6F
- M58WR032QT70ZB6E
- M58WR032QT70ZB6
- M58WR032QT60ZB6T
- M58WR032QT60ZB6F
- M58WR032QT60ZB6E
- M58WR032QT60ZB6
- M58WR032QT
- M58WR032QB80ZB6T
- M58WR032QB80ZB6F
- M58WR032QB80ZB6E
- M58WR032QB80ZB6
- M58WR032QB70ZB6T
- M58WR032QB70ZB6F
- M58-LN
- M58-LE
- M58-LC
- M5889NO
- M58659P
- M58658P
- M58657P
- M58655P
- M58653P
- M5848OP
- M58484P
- M58482P
- M58480P
- M58479P
- M58478P
- M5840
- M5832
- M582A
- M581A
- M5819
M58WR064数据表相关新闻
M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12M62342HP
https://hch01.114ic.com/
2020-11-13M61880FP
https://hch01.114ic.com/
2020-11-13M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7
DdatasheetPDF页码索引
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