64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器

IC FLASH 64M PARALLEL 56VFBGA

封装/外壳：56-VFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 56VFBGA 集成电路（IC） 存储器

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt